Tin-Doped Indium Oxide-Titania Core-Shell Nanostructures for Dye-Sensitized Solar Cells
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چکیده
منابع مشابه
Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells
Well-ordered 3D mesoporous indium tin oxide (ITO) films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO) on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs). Mesoporous ITO film were dip-coated with pore sizes of 2...
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Indium tin oxide (ITO) is a well-known n-type degenerate semiconductor with a wide variety of electronic and optoelectronic applications. Herein ITO is utilized as a photocathode material in p-type dye-sensitized solar cells in place of the commonly applied and highly colored nickel oxide (NiO) semiconductor. The application of mesoporous ITO photocathodes, [Fe(acac)3] as a redox mediator and a...
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The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm/V s, reduces these losses compared to traditional, low-mobility transparent ...
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متن کاملDye-Sensitized Nanostructured Crystalline Mesoporous Tin-doped Indium Oxide Films with Tunable Thickness for Photoelectrochemical Applications.
A simple route towards nanostructured mesoporous Indium-Tin Oxide (templated nano-ITO) electrodes exhibiting both high conductivities and optimized bicontinuous pore-solid network is reported. The ITO films are first produced as an X-ray-amorphous, high surface area material, by adapting recently established template-directed sol-gel methods using Sn(IV) and In(III) salts. Carefully controlled ...
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ژورنال
عنوان ژورنال: Advances in Condensed Matter Physics
سال: 2014
ISSN: 1687-8108,1687-8124
DOI: 10.1155/2014/903294